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Publications by Catherine Bougerol
Metal Organic Vapour-Phase Epitaxy Growth of GaN Wires on Si (111) for Light-Emitting Diode Applications
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Related publications
Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method
Applied Physics Letters
Astronomy
Physics
Growth of Cubic GaN by Metal Organic Molecular Beam Epitaxy.
SHINKU
Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Micro Organic Light Emitting Diode Arrays by Patterned Growth on Structured Polypyrrole
Advanced Optical Materials
Optics
Molecular Physics,
Optical
Atomic
Magnetic Materials
Electronic
GaN-on-Si Resonant-Cavity Light-Emitting Diode Incorporating Top and Bottom Dielectric Distributed Bragg Reflectors
Applied Physics Express
Engineering
Astronomy
Physics
GaN/AlN Resonant Tunneling Diode With High Peak-To-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy
Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Optimization of Organic Light Emitting Diode Structures
GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON
Le Journal de Physique Colloques
