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Publications by Colin J. Humphreys
Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V
Applied Physics Express
Engineering
Astronomy
Physics
Structural and Magnetic Properties of Ultra-Thin Fe Films on Metal-Organic Chemical Vapour Deposited GaN(0001)
Journal of Applied Physics
Astronomy
Physics
The Microstructure of Non-Polar A-Plane (11 2¯0) InGaN Quantum Wells
Journal of Applied Physics
Astronomy
Physics
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Investigation of Indium Gallium Nitride Facet-Dependent Nonpolar Growth Rates and Composition for Core–shell Light-Emitting Diodes
Journal of Nanophotonics
Condensed Matter Physics
Nanoscience
Optical
Magnetic Materials
Nanotechnology
Electronic
Characteristics and Applications of InGaN Micro-Light Emitting Diodes on Si Substrates
