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Publications by D. A. Woolf

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

English

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InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

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Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy

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Accommodation Mechanism of InN Nanocolumns Grown on Si(111) Substrates by Molecular Beam Epitaxy

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Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy

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Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy

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Structure of SiC Films Grown on Si(111) and (110) Substrates by Solid-Source Molecular Beam Epitaxy

Acta Crystallographica Section A Foundations of Crystallography

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Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

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GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

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