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Publications by D. Floriot
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
A Drain-Lag Model for AlGaN/GaN Power HEMTs
IEEE MTT-S International Microwave Symposium Digest
Electronic Engineering
Radiation
Electrical
Condensed Matter Physics
Related publications
COMPUTER AIDED DESIGN (CAD) OF THE AlGaN/GaN FET X-Band LOW-NOISE AMPLIFIERS
Electronic engineering. Series 2. Semiconductor device
Hydrodynamic Modeling of AlGaN/GaN HEMTs
Wideband Harmonically Matched Packaged GaN HEMTs With High PAE Performances at S-Band Frequencies
International Journal of Microwave and Wireless Technologies
Electronic Engineering
Electrical
High Power, High PAE Q-Band Sub-10 Nm Barrier Thickness AlN/GaN HEMTs
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Design of High Power S-Band GaN MMIC Power Amplifiers for WiMAX Applications
Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate
Broadband AlGaN/GaN HEMT MMIC Attenuators With High Dynamic Range
Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications
Journal of the Korean Physical Society
Astronomy
Physics
