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Publications by D. Galland

Interpretation of Luminescence in GaAs : Cr : 0.839 eV and 0.574 eV Lines

Journal de Physique

English

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Ev – Dominating Sets and Ev – Domination Polynomials of Paths

IOSR Journal of Mathematics

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Optical Metastability of Subband Gap (2.2 eV) Yellow Luminescence in GaN

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Microscopic Study of Defect Luminescence Between 0.72 - 0.85 eV by Optical Microscopy

Microscopy Research

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JAPAN TAPPI JOURNAL

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Identification of EV Use Patterns, Based on Large Scale EV Monitoring Data

World Electric Vehicle Journal

Automotive Engineering

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Releasing More Capacity for EV Integration by DC Medium Voltage Distribution Lines

IET Power Electronics

Electronic Engineering

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Passivation of a Bulk Defect Ec-0.22 eV in GaAs by Contact With Phosphoric Acid

Acta Physica Polonica A

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Two-Photon-Excited Luminescence and Defect Formation in SiO2 Nanoparticles Induced by 6.4-eV ArF Laser Light

Physical Review B

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Mass Absorption Coefficient of Tungsten and Tantalum, 1450 eV to 2350 eV: Experiment, Theory, and Application

Journal of Research of the National Institute of Standards and Technology

English