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Publications by D. Gregušová
Aluminum Oxide as Passivation and Gate Insulator in GaAs-based Field-Effect Transistors Prepared in Situ by Metal-Organic Vapor Deposition
Applied Physics Letters
Astronomy
Physics
Related publications
Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
Metal-Gate/High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition
Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate
Applied Physics Letters
Astronomy
Physics
Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution
Advanced Functional Materials
Materials Science
Condensed Matter Physics
Electrochemistry
Nanoscience
Optical
Biomaterials
Magnetic Materials
Nanotechnology
Chemistry
Electronic
Deep-Level Emissions in GaAsN∕GaAs Structures Grown by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics
Astronomy
Physics
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Applied Sciences (Switzerland)
Instrumentation
Materials Science
Fluid Flow
Engineering
Computer Science Applications
Process Chemistry
Transfer Processes
Technology
Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Current Transport Mechanisms in GaAs/AlAs Tunnel Structures Grown by Metal–organic Chemical Vapor Deposition
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
