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Publications by D. I. Westwood
Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
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Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy
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Accommodation Mechanism of InN Nanocolumns Grown on Si(111) Substrates by Molecular Beam Epitaxy
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Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy
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Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy
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Structure of SiC Films Grown on Si(111) and (110) Substrates by Solid-Source Molecular Beam Epitaxy
Acta Crystallographica Section A Foundations of Crystallography
Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy
GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.
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