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Publications by D. Planson
The Channeling Effect of Al and N Ion Implantation in 4H–SiC During JFET Integrated Device Processing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Very Low R/Sub ON/ Measured on 4h-SiC Accu-Mosfet High Power Device
