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Publications by D. Planson
The Channeling Effect of Al and N Ion Implantation in 4H–SiC During JFET Integrated Device Processing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
Very Low R/Sub ON/ Measured on 4h-SiC Accu-Mosfet High Power Device
Related publications
Ion Implantation and SiC Transistor Performance
Journal of Applied Physics
Astronomy
Physics
Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings
Materials
Materials Science
Condensed Matter Physics
Raman Mapping of 4‐MeV C and Si Channeling Implantation of 6H‐SiC
Journal of Raman Spectroscopy
Materials Science
Spectroscopy
Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation
Journal of the Mechanical Behavior of Biomedical Materials
Mechanics of Materials
Biomedical Engineering
Biomaterials
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
Astronomy
Physics
Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC
Journal of Applied Physics
Astronomy
Physics
Deep Levels in Iron Doped N- And P-Type 4h-SiC
Journal of Applied Physics
Astronomy
Physics
Evaluation of Accuracy of SiC-JFET Macromodel
ITM Web of Conferences
