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Publications by D. Rudloff
Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
Related publications
Strong Localization in InGaN Layers With High in Content Grown by Molecular-Beam Epitaxy
Applied Physics Letters
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Yellow–green Luminescence From Isoelectronic Nitrogen Centers in GaP Grown by Molecular‐beam Epitaxy
Journal of Applied Physics
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Origin of Ultraviolet Luminescence From Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy
Advanced Engineering Forum
Characterization of SnTe Films Grown by Molecular Beam Epitaxy
Brazilian Journal of Physics
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Correlation Among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy
Crystal Growth and Design
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GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.
SHINKU
Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy
Journal of Applied Physics
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Characterization of GaN Microstructures Grown by Plasma-Assisted Molecular Beam Epitaxy
AIP Advances
Nanotechnology
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Nanoscience
Thermal Stability of CdZnO Thin Films Grown by Molecular-Beam Epitaxy
Applied Surface Science
Surfaces
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Condensed Matter Physics
Interfaces
Films
Coatings
Chemistry
Physics
