Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by D. Tsvetkov
Characterization of 2.5-Inch Diameter Bulk GaN Grown From Melt-Solution
physica status solidi (a)
Related publications
Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates
Applied Physics Letters
Astronomy
Physics
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates
Applied Physics Letters
Astronomy
Physics
Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure
Acta Physica Polonica A
Astronomy
Physics
Growth and Characterization of Hexamethylenetetramine Crystals Grown From Solution
Materials Science-Poland
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Solution and Bulk Properties of Branched Polyvinyl Acetates IV—Melt Viscosity
Polymer
Organic Chemistry
Polymers
Materials Chemistry
Plastics
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express
Engineering
Astronomy
Physics
Growth and Characterization of Gan Bulk Crystals via Vapor Phase Transport
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Properties and Reliability of Ultrathin Oxides Grown on Four Inch Diameter Silicon Wafers by Microwave Plasma Afterglow Oxidation
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Characterization of GaN Microstructures Grown by Plasma-Assisted Molecular Beam Epitaxy
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience