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Publications by E. N. Sgourou
Erratum “Impact of Isovalent Doping on the Trapping of Vacancy and Interstitial Related Defects in Si” [J. Appl. Phys. 113, 113506 (2013)]
Journal of Applied Physics
Astronomy
Physics
Effect of Germanium Doping on the Annealing Characteristics of Oxygen and Carbon-Related Defects in Czochralski Silicon
Journal of Applied Physics
Astronomy
Physics
Strategies to Suppress A-Center Formation in Silicon and Germanium From a Mass Action Analysis Viewpoint
Journal of Materials Science: Materials in Electronics
Electronic Engineering
Biomedical Engineering
Condensed Matter Physics
Biomaterials
Electronic
Molecular Physics,
Biophysics
Optical
Electrical
Atomic
Magnetic Materials
Bioengineering
Optics
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