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Publications by Elison Matioli
Multi-Channel Tri-Gate Normally-on/Off AlGaN/GaN MOSHEMTs on Si Substrate With High Breakdown Voltage and Low ON-resistance
Applied Physics Letters
Astronomy
Physics
Improved Electrical and Thermal Performances in Nanostructured GaN Devices
Related publications
High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation
Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate
Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
Study on AlGaN/GaN Heterostructures Grown on Si Substrate
Journal of the Vacuum Society of Japan
Surfaces
Instrumentation
Interfaces
Spectroscopy
Materials Science
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates
Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications
Journal of the Korean Physical Society
Astronomy
Physics
Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
Normally-Off AlGaN/GaN MIS-HFETs Using Non-Polar A-Plane
