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Publications by F. Gamiz
Monte Carlo Simulation of Double Gate Silicon on Insulator Devices Operated as Velocity Modulation Transistors
Applied Physics Letters
Astronomy
Physics
A Closed-Loop Evaluation and Validation of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Electron Mobility in Double Gate Silicon on Insulator Transistors: Symmetric-Gate Versus Asymmetric-Gate Configuration
Journal of Applied Physics
Astronomy
Physics
Role of Surface-Roughness Scattering in Double Gate Silicon-On-Insulator Inversion Layers
Journal of Applied Physics
Astronomy
Physics
Monte Carlo Simulation of Thermal Conductivities of Silicon Nanowires
Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors
Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Acta Physica Polonica A
Astronomy
Physics
Monte Carlo Simulation of a Uniform Response Silicon X-Ray Detector
International Journal of Recent Technology and Engineering
Engineering
Management of Technology
Innovation
Advanced Depleted-Substrate Transistors: Single-Gate, Double-Gate and Tri-Gate
Pentacene Based Thin Film Transistors With High-K Dielectric Nd2O3 as a Gate Insulator
Brazilian Journal of Physics
Astronomy
Physics
Electric Double Layer Gate Field-Effect Transistors Based on Si
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
