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Publications by F. Iga
Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM Using Spin-Transfer-Torque (STT) MTJs
Ion Pairs and Spontaneous Break of Symmetry in the Valence-Fluctuating compoundYbB12
Physical Review B
High-Resolution Photoemission Study of the Temperature-Dependentc−fhybridization Gap in the Kondo semiconductorYbB12
Physical Review B
Orbital-Ordering-Induced Phase Transition inLaVO3andCeVO3
Physical Review B
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Increasing Static Noise Margin of Single-Bit-Line SRAM by Lowering Bit-Line Voltage During Reading
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Skutterudite Thermoelectric Modules With High Volume-Power-Density: Scalability and Reproducibility
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Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions
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Comparative Analysis of Various SRAM Cells With Low Power, High Read Stability and Low Area
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Low Power and High Speed 13T SRAM Cell With Bit-Interleaving Capability
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