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Publications by F. Laariedh

The Channeling Effect of Al and N Ion Implantation in 4H–SiC During JFET Integrated Device Processing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

High Energy Physics

Instrumentation

English

Related publications

Ion Implantation and SiC Transistor Performance

Journal of Applied Physics

English

Ohmic Contacts on P-Type Al-Implanted 4h-SiC Layers After Different Post-Implantation Annealings

Materials Science

Condensed Matter Physics

English

Raman Mapping of 4‐MeV C and Si Channeling Implantation of 6H‐SiC

Journal of Raman Spectroscopy

Materials Science

English

Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation

Journal of the Mechanical Behavior of Biomedical Materials

Mechanics of Materials

Biomedical Engineering

English

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

IEEE Electron Device Letters

Electronic Engineering

Magnetic Materials

English

Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface

Acta Physica Polonica A

English

Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

Journal of Applied Physics

English

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics

English

Evaluation of Accuracy of SiC-JFET Macromodel

ITM Web of Conferences

English