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Publications by F. Lanciotti

Alloying Effects on the Critical Layer Thickness in InxGa1−xAs/InP Heterostructures Analyzed by Raman Scattering

Applied Physics Letters

English

Related publications

Direct Determination of the Ambipolar Diffusion Length in Strained InxGa1−xAs/InP Quantum Wells by Cathodoluminescence

Applied Physics Letters

English

Instability of Homogeneous Composition of Highly Strained Quantum Wells in Heterostructures GaAs/InxGa1-xAs/GaAs

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

Local Stress Measurements in Laterally Oxidized GaAs/AlxGa1−xAs Heterostructures by Micro-Raman Spectroscopy

Applied Physics Letters

English

Dielectric Screening Effects on Electron Transport in Ga0.51In0.49P/InxGa1−xAs/GaAs Quantum Wells

Journal of Applied Physics

English

Alloying Effects in Self-Assembled InAs/InP Dots

Journal of Crystal Growth

Inorganic Chemistry

Materials Chemistry

Condensed Matter Physics

English

Phase Stability and the Arsenic Vacancy Defect in InxGa1−xAs

Physical Review B

English

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Advances in Condensed Matter Physics

Condensed Matter Physics

English

Cracks in InP-based Heterostructures

Acta Crystallographica Section A Foundations of Crystallography

English

Observation of Local Strain in InxGa1-xAs Quantum Dots by Spherical-Aberration Corrected HRTEM

English