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Publications by F. Mont
Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Related publications
GaN/AlN Resonant Tunneling Diode With High Peak-To-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy
Aluminum Incorporation Into AlGaN Grown by Low-Pressure Metal Organic Vapor Phase Epitaxy
Journal of Applied Physics
Astronomy
Physics
Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Residual Doping in Homoepitaxial Zinc Oxide Layers Grown by Metal Organic Vapor Phase Epitaxy
Applied Physics Express
Engineering
Astronomy
Physics
Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method
Applied Physics Letters
Astronomy
Physics
Particular Electrical Quality Ofa-Plane GaN Films Grown Onr-Plane Sapphire by Metal-Organic Chemical Vapor Deposition
Journal of Semiconductors
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Growth Direction Control and Magnetic Characterizations of MnAs Grown by Selective-Area Metal-Organic Vapor Phase Epitaxy
Study on AlN Growth Conditions for Hydride Vapor Phase Epitaxy
Transactions of the Materials Research Society of Japan
Optical Properties of Metastable Shallow Acceptors in Mg-Doped GaN Layers Grown by Metal-Organic Vapor Phase Epitaxy
