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Publications by F. T. Chen
Formation Free and High-Performance Cross-Point Resistive Switching Memory Using Ir/TaOx/W Structure
Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Scenario Using Novel Cu/GeOx/W Memory Device
Related publications
Enhanced Resistive Switching Memory Characteristics and Mechanism Using a Ti Nanolayer at the W/TaOx Interface
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
TaOx-based Resistive Switching Memories: Prospective and Challenges
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Comparison of Resistive Switching Characteristics Using Copper and Aluminum Electrodes on GeOx/W Cross-Point Memories
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Volatile Resistive Switching in Cu/TaOx/Δ-Cu/Pt Devices
Applied Physics Letters
Astronomy
Physics
High Switching Endurance in TaOx Memristive Devices
Applied Physics Letters
Astronomy
Physics
Electroforming-Free Resistive Switching Memory Effect in Transparent P-Type Tin Monoxide
Applied Physics Letters
Astronomy
Physics
Approaches for Improving the Performance of Filament-Type Resistive Switching Memory
Chinese Science Bulletin
Direct Evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film
Scientific Reports
Multidisciplinary
