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Publications by Faiz Fatah

Bias-Dependent Radio Frequency Performance for 40 Nm InAs High-Electron-Mobility Transistor With a Cutoff Frequency Higher Than 600 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Related publications

Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Applied Physics Express

English

Impedance Analysis of a Radio-Frequency Single Electron Transistor

English

Development of High-Speed Mobile Radio Communication Systems Using 40 GHz Frequency Band

Planetary Sciences

Condensed Matter Physics

Electronic Engineering

English

Highly Sensitive and Broadband Carbon Nanotube Radio-Frequency Single-Electron Transistor

Journal of Applied Physics

English

Operation of Single-Walled Carbon Nanotube as a Radio-Frequency Single-Electron Transistor

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

On Nature of the High Frequency Cutoff in Pulsar Radio Spectra

International Astronomical Union Colloquium

English

An Ultrasensitive Radio-Frequency Single-Electron Transistor Working Up to 4.2 K

Journal of Applied Physics

English

Temperature Dependent Effective Mass in AlGaN/GaN High Electron Mobility Transistor Structures

Applied Physics Letters

English