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Publications by Fan-I Peng
The Effects of Channel Doping Concentration for N-Type Junction-Less Double-Gate Poly-Si Nanostrip Transistors
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Related publications
The Characteristics of N- And P-Channel Poly-Si Thin-Film Transistors With Fully Ni-Salicided S/D and Gate Structure
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors
Journal of Materials
Electric Double Layer Gate Field-Effect Transistors Based on Si
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors
Effects of Depleted Poly-Si Gate on MOSFET Performance
Spatially and Temporally Resolving the Degradation of N-Channel Poly-Si Thin-Film Transistors Under Hot-Carrier Stressing
Journal of Applied Physics
Astronomy
Physics
Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor
Coatings
Surfaces
Films
Coatings
Materials Chemistry
Interfaces
Research on Microwave Junction Gate Field Effect Transistors.
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
