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Publications by Farid Medjdoub

High Power, High PAE Q-Band Sub-10 Nm Barrier Thickness AlN/GaN HEMTs

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Related publications

Wideband Harmonically Matched Packaged GaN HEMTs With High PAE Performances at S-Band Frequencies

International Journal of Microwave and Wireless Technologies

Electronic Engineering

English

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

English

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

ECS Transactions

English

AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric

Electronics Letters

Electronic Engineering

English

Design of High Power S-Band GaN MMIC Power Amplifiers for WiMAX Applications

English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society

English

High-Voltage AlGaN/GaN HEMTs on Si Substrate With Implant Isolation

English

60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics

English

Low Resistance Contact and K-Band High Power Performance for AlGaN/GaN HJFETs

IEEJ Transactions on Electronics, Information and Systems

Electronic Engineering

English