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Publications by Fiacre E. Rougieux
Charge States of the Reactants in the Hydrogen Passivation of Interstitial Iron in P-Type Crystalline Silicon
Journal of Applied Physics
Astronomy
Physics
Related publications
Spin Delocalization of Interstitial Iron in Silicon
Physical Review B
POx/Al2O3 Stacks: Highly Effective Surface Passivation of Crystalline Silicon With a Large Positive Fixed Charge
Applied Physics Letters
Astronomy
Physics
Hydrogen Ion Passivation of Multicrystalline Silicon Solar Cells
Revue de Physique Appliquée
Hydrogen Molecules and Hydrogen-Related Defects in Crystalline Silicon
Physical Review B
Excellent Passivation of Highly Doped P-Type Si Surfaces by the Negative-Charge-Dielectric Al2O3
Applied Physics Letters
Astronomy
Physics
A Novel Source of Atomic Hydrogen for Passivation of Defects in Silicon
Physica Status Solidi - Rapid Research Letters
Materials Science
Condensed Matter Physics
Detailed Investigation of Surface Passivation Methods for Lifetime Measurements on P-Type Silicon Wafers
IEEE Journal of Photovoltaics
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Formation of Donor and Acceptor States of the Divacancy–oxygen Centre in P-Type Cz-Silicon
Journal of Physics Condensed Matter
Materials Science
Condensed Matter Physics
Defect Creation and Passivation by Hydrogen Plasma in Silicon and Germanium
ECS Meeting Abstracts
