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Publications by G Alfieri

The Effects of Displacement Threshold Irradiation Energy on Deep Levels in P-Type 6h-SiC

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2011English

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Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

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Deep Levels in Iron Doped N- And P-Type 4h-SiC

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GaN Layers Grown by HVPE on P-Type 6h-SiC Substrates

MRS Internet Journal of Nitride Semiconductor Research
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Primary Photoluminescence in As-Neutron (Electron) -Irradiated N-Type 6h-SiC

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HVPE of Scandium Nitride on 6H–SiC(0001)

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Hydrogen Intercalation of Graphene Grown on 6h-SiC(0001)

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Localized Surface Plasmon on 6H SiC With Ag Nanoparticles

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Threshold-Related Effects on the High Energy Plateau in Above-Threshold Detachment

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Optical Properties of Nitride-Based Structures Grown on 6h-SiC

MRS Internet Journal of Nitride Semiconductor Research
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