Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by G. Capellini
Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature
Related publications
Well-Arrayed ZnO Nanostructures Formed by Multi-Annealing Processes at Low Temperature
Physica Status Solidi (C) Current Topics in Solid State Physics
Condensed Matter Physics
The Determination and Interpretation of Electrically Active Charge Density Profiles at Reverse Biased P-N Junctions From Electron Holograms
Microscopy and Microanalysis
Instrumentation
Structure Transformation of the C Defects Observed at Low Temperature (80 K)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Anomalous Behavior of Electrically Active Defects Near EC−0.5 eV in MOCVD, As-Grown GaN
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Ge-On-Si Laser Operating at Room Temperature
Optics Letters
Optics
Atomic
Molecular Physics,
Low-Temperature Fabrication of Ge Nanostructures by Ion Irradiation
Transactions of the Materials Research Society of Japan
Controlled Individual Skyrmion Nucleation at Artificial Defects Formed by Ion Irradiation
Small
Materials Science
Nanoscience
Engineering
Biomaterials
Medicine
Biotechnology
Nanotechnology
Chemistry
Modeling Electrically Active Viscoelastic Membranes
PLoS ONE
Multidisciplinary
Evolution Kinetics of Elementary Point Defects in ZnO Implanted With Low Fluences of Helium at Cryogenic Temperature
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials