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Publications by G. Jolley
Thin Film Three-Dimensional Topological Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors: A Candidate for Sub-10 Nm Devices
Journal of Applied Physics
Astronomy
Physics
Analytical Expression for the Quantum Dot Contribution to the Quasistatic Capacitance for Conduction Band Characterization
Journal of Applied Physics
Astronomy
Physics
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Imperfect Two-Dimensional Topological Insulator Field-Effect Transistors
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Artificial Semiconductor/Insulator Superlattice Channel Structure for High-Performance Oxide Thin-Film Transistors
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Random Dopant Model for Three-Dimensional Drift-Diffusion Simulations in Metal–oxide–semiconductor Field-Effect-Transistors
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Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
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Metal-Semiconductor Interfaces in Thin-Film Transistors
Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors
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National Project on 45 to 32 Nm Metal Oxide Semiconductor Field Effect Transistors for Next Century IC Fabrications
e-Journal of Surface Science and Nanotechnology
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Bioengineering
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Low Dielectric Constant-Based Organic Field-Effect Transistors and Metal-Insulator-Semiconductor Capacitors
Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
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