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Publications by G. Lucovsky
The Effects of Interfacial Sub-Oxide Transition Regions and Monolayer Level Nitridation on Tunneling Currents in Silicon Devices
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Depth-Dependent Spectroscopic Defect Characterization of the Interface Between Plasma-Deposited SiO2 and Silicon
Applied Physics Letters
Astronomy
Physics
Voltage- And Temperature-Dependent Gate Capacitance and Current Model: Application to ZrO/sub 2/ N-Channel MOS Capacitor
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Modeled Tunnel Currents for High Dielectric Constant Dielectrics
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Electronic Properties of the Zr–ZrO2–SiO2–Si(100) Gate Stack Structure
Journal of Applied Physics
Astronomy
Physics
Low Energy Electron-Excited Nanoscale Luminescence: A Tool to Detect Trap Activation by Ionizing Radiation
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
Long-Term Reliability Degradation of Ultrathin Dielectric Films Due to Heavy-Ion Irradiation
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors
IEEE Transactions on Nuclear Science
Electronic Engineering
Nuclear
Nuclear Energy
High Energy Physics
Engineering
Electrical
Phonon Densities of States and Eigenvectors in Hydrogenated and Fluorinated Amorphous Silicon
Le Journal de Physique Colloques
