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Publications by G. W. ’t Hooft

Large Redshift in Photoluminescence of P-Doped InP Nanowires Induced by Fermi-Level Pinning

Applied Physics Letters

English

Related publications

Charge Transfer and Fermi Level Shift Inp-Doped Single-Walled Carbon Nanotubes

Physical Review B

English

Erratum: ‘‘Chemical Treatment and Fermi‐level Pinning of CuInS2 and InP Photocathodes’’ [J. Appl. Phys. 63, 2420 (1988)]

Journal of Applied Physics

English

Fermi-Level Pinning Can Determine Polarity in Semiconductor Nanorods

Physical Review B

English

Valence-Band Splitting Energies in Wurtzite InP Nanowires: Photoluminescence Spectroscopy Andab Initiocalculations

Physical Review B

English

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

English

Fermi Level Tuning of Ag-Doped Bi2Se3 Topological Insulator

Scientific Reports

Multidisciplinary

English

Photoluminescence Features of GaSb Doped by Fe

Journal of Luminescence and Applications

English

Reduction-Induced Fermi Level Pinning at the Interfaces Between Pb(Zr,Ti)O3and Pt, Cu and Ag Metal Electrodes

Journal of Physics D: Applied Physics

Condensed Matter Physics

Magnetic Materials

English

Substitution-Induced Pinning in MgB2 Superconductor Doped With SiC Nano-Particles

Superconductor Science and Technology

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

English