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Publications by Gregory Snider
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Degradation of Dc Characteristics of InAlN/GaN High Electron Mobility Transistors by 5 MeV Proton Irradiation
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
Applied Physics Express
Engineering
Astronomy
Physics
Bias-Dependent Radio Frequency Performance for 40 Nm InAs High-Electron-Mobility Transistor With a Cutoff Frequency Higher Than 600 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Fast Electrical Detection of Hg(II) Ions With AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
