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Publications by H. Doscher

Si(100) Versus Ge(100): Watching the Interface Formation for the Growth of III-V-based Solar Cells on Abundant Substrates

English

Related publications

Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation

Multidisciplinary

Philosophy of Science

English

CoSi2heteroepitaxy on Patterned Si(100) Substrates

Journal of Applied Physics

English

Nonthermal Laser-Induced Formation of Crystalline Ge Quantum Dots on Si(100)

Journal of Applied Physics

English

III-V Nanowire-Based Solar Cells on Si and Graphene

English

Growth Mechanism of (111)-Textured 3c-SiC Films on Si(100) Substrates

Microscopy and Microanalysis

Instrumentation

English

Growth Rate Effect on 3c-SiC Film Residual Stress on (100) Si Substrates

Materials Science Forum

English

Growth Behaviour of Ge Nano-Islands on the Nanosized Si{111} Facets Bordering on Two {100} Planes

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Electron Energy Band Alignment at the (100)Si/MgO Interface

Applied Physics Letters

English

Epitaxial Growth of Multiferroic BiFeO3 Thin Films With (101) and (111) Orientations on (100) Si Substrates

Applied Physics Letters

English