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Publications by H. Hafdallah

Picosecond Large‐signal Switching Characteristics of a Pseudomorphic AlGaAs/InGaAs Modulated Doped Field Effect Transistor

Applied Physics Letters

English

Related publications

Improved Temperature-Dependent Characteristics of a Sulfur-Passivated AlGaAs∕InGaAs∕GaAs Pseudomorphic High-Electron-Mobility Transistor

Journal of the Electrochemical Society

Condensed Matter Physics

Electrochemistry

Materials Chemistry

Magnetic Materials

Renewable Energy

the Environment

English

Selective Wet Etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

Journal of Applied Physics

English

Application of Nonalloyed PdGe Ohmic Contact to Self-Aligned Gate AlGaAs/InGaAs Pseudomorphic High-Electron-Mobility Transistor

Applied Physics Letters

English

Characteristics of a Carbon Nanotube Field-Effect Transistor Analyzed as a Ballistic Nanowire Field-Effect Transistor

Journal of Applied Physics

English

Photoinduced Band-Bending Effect of Low Temperature GaAs on AlGaAs/InGaAs/GaAs Modulation-Doped Transistors

Journal of Applied Physics

English

Magneto‐Hall Characterization of Delta‐doped Pseudomorphic High Electron Mobility Transistor Structures

Journal of Applied Physics

English

Nanosheet Thickness-Modulated MoS2dielectric Property Evidenced by Field-Effect Transistor Performance

Materials Science

English

Large-Signal Model of the Bilayer Graphene Field-Effect Transistor Targeting Radio-Frequency Applications: Theory Versus Experiment

Journal of Applied Physics

English

Hot Electron Degradation of the DC and RF Characteristics of AlGaAs/InGaAs/GaAs PHEMT's

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

English