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Publications by H. J. Ou
CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
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InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Groove GaInAsP Laser on Semi-Insulating InP
Electronics Letters
Electronic Engineering
Electrical
Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor
Journal of Applied Physics
Astronomy
Physics
Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors With Buried Tungsten Wires
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Retraction: “Functional Characteristics in Asymmetric Source/Drain InAlAsSb∕InGaAs∕InP Δ-Doped High Electron Mobility Transistor” [Appl. Phys. Lett. 86, 033505 (2005)]
Applied Physics Letters
Astronomy
Physics
Comparison of As- And P-Based Metamorphic Buffers for High Performance InP Heterojunction Bipolar Transistor and High Electron Mobility Transistor Applications
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Lateral Current Injection GaInAsP/InP Laser on Semi-Insulating Substrate for Membrane-Based Photonic Circuits
Optics Express
Optics
Atomic
Molecular Physics,
Silice UVCVD Pour Transistors MISFET Autoalignés Sur InP
Revue de Physique Appliquée
Highly Doped InP as a Low Loss Plasmonic Material for Mid-Ir Region
Optics Express
Optics
Atomic
Molecular Physics,
