Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by H. Katahama
Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy
Related publications
InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.
SHINKU
Formation of Large-Grain-Sized BaSi2 Epitaxial Layers Grown on Si(111) by Molecular Beam Epitaxy
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Variable Range Hopping Conduction in Low-Temperature Molecular Beam Epitaxy GaAs
Brazilian Journal of Physics
Astronomy
Physics
Optical Characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by Molecular‐beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Elimination of Threading Dislocations in As-Grown PbSe Film on Patterned Si(111) Substrate Using Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy
Applied Physics Letters
Astronomy
Physics
Effects of Surface States and Si-Interlayer Based Surface Passivation on GaAs Quantum Wires Grown by Selective Molecular Beam Epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures