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Publications by H. S. P. Wong
Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
Recent Progress in Carbon Nanotube Electronics - Modeling, Materials, Devices, Circuits, and Interconnects (Invited)
Related publications
Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Energy Efficient Caching for Phase-Change Memory
Lecture Notes in Computer Science
Computer Science
Theoretical Computer Science
Structural Change With the Resistance Drift Phenomenon in Amorphous GeTe Phase Change Materials’ Thin Films
Journal of Physics D: Applied Physics
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Phase-Change Memory: Increasing the Atomic Packing Efficiency of Phase-Change Memory Glass to Reduce the Density Change Upon Crystallization (Adv. Electron. Mater. 9/2018)
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Optimization of the Phase Change Random Access Memory Employing Phase Change Materials
Investigating the Effect of Supramolecular Gel Phase Crystallization on Gel Nucleation
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The Role of Phase Change Materials for the Sustainable Energy
E3S Web of Conferences
Earth
Energy
Planetary Sciences
Environmental Science
Internal Energy Change and Activation Energy Effects on Casson Fluid
AIP Advances
Nanotechnology
Astronomy
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Nanoscience
