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Publications by H. Sakowska

Influence of SiC Surface Preparation on Homoepitaxial Growth; X-Ray Reflectometric Studies

Acta Physica Polonica A
AstronomyPhysics
2010English

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High-Resolution X-Ray Study of Thin GaN Film on SiC

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Homoepitaxial Diamond Growth for the Control of Surface Conductive Carrier Transport Properties

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X-Ray Surface Diffraction.

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