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Publications by H. Yacoub

Interplay Between C-Doping, Threading Dislocations, Breakdown, and Leakage in GaN on Si HEMT Structures

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2020English

Related publications

Theory of Threading Edge and Screw Dislocations in GaN

Physical Review Letters
AstronomyPhysics
1997English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

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Interaction Between Si Doping and the Polarization-Induced Internal Electric Field in the AlGaN/GaN Superlattice

Applied Physics Letters
AstronomyPhysics
2011English

Dislocations at the Interface Between Sapphire and GaN

Journal of Materials Science: Materials in Electronics
Electronic EngineeringBiomedical EngineeringCondensed Matter PhysicsBiomaterialsElectronicMolecular Physics,BiophysicsOpticalElectricalAtomicMagnetic MaterialsBioengineeringOptics
2007English

Threading Dislocations in Metamorphic In0.20Ga0.80As Grown on GaAs Substrates

Microscopy and Microanalysis
Instrumentation
2011English

Screw Dislocations in GaN

Microscopy and Microanalysis
Instrumentation
2002English

Elimination of Threading Dislocations in As-Grown PbSe Film on Patterned Si(111) Substrate Using Molecular Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2010English

Effectiveness of TiN Porous Templates on the Reduction of Threading Dislocations in GaN Overgrowth by Organometallic Vapor-Phase Epitaxy

Applied Physics Letters
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2005English

Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

ECS Meeting Abstracts
2014English

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