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Publications by Hag-Youl Bae

Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors

Journal of Semiconductor Technology and Science

Electronic Engineering

English

Related publications

High Performance Metal Oxide Field-Effect Transistors With a Reverse Offset Printed Cu Source/Drain Electrode

English

Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of Applied Physics

Astronomy

Physics

2005

English

Random Dopant Model for Three-Dimensional Drift-Diffusion Simulations in Metal–oxide–semiconductor Field-Effect-Transistors

Applied Physics Letters

Astronomy

Physics

2001

English

Retraction: Organic Single-Crystal Transistors With Secondary Gates on Source and Drain Electrodes

e-Journal of Surface Science and Nanotechnology

Surfaces

Mechanics of Materials

Condensed Matter Physics

English

Source / Drain Contacts in Organic Polymer Thin Film Transistors

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

2003

English

Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors

English

Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric

Journal of Applied Physics

Astronomy

Physics

2006

English

Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate

Applied Physics Letters

Astronomy

Physics

2003

English

Realization of Dual-Gated Ge–SixGe1−x Core-Shell Nanowire Field Effect Transistors With Highly Doped Source and Drain

Applied Physics Letters

Astronomy

Physics

2009

English

Amanote Research

Discover open access scientific publications

Search, annotate, share and cite publications

Publications by Hag-Youl Bae

Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors

Related publications

High Performance Metal Oxide Field-Effect Transistors With a Reverse Offset Printed Cu Source/Drain Electrode

Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors

Random Dopant Model for Three-Dimensional Drift-Diffusion Simulations in Metal–oxide–semiconductor Field-Effect-Transistors

Retraction: Organic Single-Crystal Transistors With Secondary Gates on Source and Drain Electrodes

Source / Drain Contacts in Organic Polymer Thin Film Transistors

Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors

Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric

Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate

Realization of Dual-Gated Ge–SixGe1−x Core-Shell Nanowire Field Effect Transistors With Highly Doped Source and Drain