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Publications by Haiqiang Jia
Erratum: CORRIGENDUM: A Novel Wavelength-Adjusting Method in InGaN-based Light-Emitting Diodes
Scientific Reports
Multidisciplinary
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Advantages of Blue InGaN Light-Emitting Diodes With InGaN-AlGaN-InGaN Barriers
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Astronomy
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Nitride-Based Light-Emitting Diodes With InGaN∕GaN SAQD Active Layers
IEE Proceedings - Circuits, Devices and Systems
InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes
Applied Physics Letters
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Investigation of P-Type Depletion Doping for InGaN/GaN-based Light-Emitting Diodes
Applied Physics Letters
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Dislocation Related Droop in InGaN/GaN Light Emitting Diodes Investigated via Cathodoluminescence
Applied Physics Letters
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Background Story of the Invention of Efficient Blue InGaN Light Emitting Diodes
International Journal of Modern Physics B
Nonlinear Physics
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Characteristics and Applications of InGaN Micro-Light Emitting Diodes on Si Substrates
Erratum: “Spatially Resolved Study of Quantum Efficiency Droop in InGaN Light-Emitting Diodes,” [Appl. Phys. Lett. 101, 252103 (2012)]
Applied Physics Letters
Astronomy
Physics
InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted From a Si Substrate