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Publications by Haiquan Shan

Memory Devices: Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching (Adv. Mater. 28/2018)

Advanced Materials
Mechanics of MaterialsMaterials ScienceNanotechnologyMechanical EngineeringNanoscience
2018English

P3HT With Zn(C 6 F 5 ) 2 as P‐Type Dopant for the Enhanced Performance of Planar Perovskite Solar Cells

Solar RRL
2020English

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