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Publications by Han-Ting Liao
Oxidized-Monolayer Tunneling Barrier for Strong Fermi-Level Depinning in Layered InSe Transistors
npj 2D Materials and Applications
Mechanics of Materials
Materials Science
Chemistry
Condensed Matter Physics
Mechanical Engineering
Related publications
InSe Tribotronic Transistors: Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics (Adv. Funct. Mater. 19/2019)
Advanced Functional Materials
Materials Science
Condensed Matter Physics
Electrochemistry
Nanoscience
Optical
Biomaterials
Magnetic Materials
Nanotechnology
Chemistry
Electronic
Capacitances in Tunneling Field-Effect Transistors
Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Stable InSe Transistors With High-Field Effect Mobility for Reliable Nerve Signal Sensing
npj 2D Materials and Applications
Mechanics of Materials
Materials Science
Chemistry
Condensed Matter Physics
Mechanical Engineering
Time-Correlated Vortex Tunneling in Layered Superconductors
Condensed Matter
Relativistic Resonant Tunneling Lifetime for Double Barrier System
Advances in Applied Physics
Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Nature of “Superluminal" Barrier Tunneling
Physical Review Letters
Astronomy
Physics
Probing a Two-Dimensional Fermi Surface by Tunneling
Physical Review B
