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Publications by Hansheng Ye

Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates

Applied Physics Letters
AstronomyPhysics
2018English

Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2019English

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Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates

2019English

Characterization of 2.5-Inch Diameter Bulk GaN Grown From Melt-Solution

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2001English

Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research
1998English

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express
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Molten Salt-Based Growth of Bulk GaN and InN for Substrates

2006English

LEDs on HVPE Grown GaN Substrates: Influence of Macroscopic Surface Features

AIP Advances
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2014English

Blue Lasers on High Pressure Grown GaN Single Crystal Substrates

Europhysics News
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2004English

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