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Publications by Hilde Hardtdegen

Gate-Defined Quantum-Dot Devices Realized in InGaAs/InP by Incorporating a HfO2 Layer as Gate Dielectric

Applied Physics Letters

English

Optimization of Modulation‐doped Ga1−xInxAs/InP Heterostructures Towards Extremely High Mobilities

Journal of Applied Physics

English

Weak Antilocalization in High mobilityGaxIn1−xAs∕InPtwo-dimensional Electron Gases With Strong Spin-Orbit Coupling

Physical Review B

English

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