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Publications by HoKwon Kim

Large-Grain MBE-grown GaSe on GaAs With a Mexican Hat-Like Valence Band Dispersion

npj 2D Materials and Applications
Mechanics of MaterialsMaterials ScienceChemistryCondensed Matter PhysicsMechanical Engineering
2018English

Related publications

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

Materials
Materials ScienceCondensed Matter Physics
2010English

Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

MRS Internet Journal of Nitride Semiconductor Research
1999English

Experimental Evidence for 400-meV Valence-Band Dispersion in solidC60

Physical Review B
1993English

Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

Scientific Reports
Multidisciplinary
2019English

Erratum: “Atomic Structure of MBE-grown GaAs Nanowhiskers” [Phys. Solid State 47, 2213 (2005)]

Physics of the Solid State
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2006English

GaAs Nanoneedles Grown on Sapphire

Applied Physics Letters
AstronomyPhysics
2011English

The EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE

Le Journal de Physique Colloques
1982English

Dirac’s HdCdTe Semimetals Grown by MBE Technology

EPJ Web of Conferences
AstronomyPhysics
2016English

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