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Publications by Huseyin Tecimer
A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, With and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature
Journal of Nanomedicine & Nanotechnology
Related publications
Electrical Transport Characteristics of Au/N-GaAs Schottky Diodes on N-Ge at Low Temperatures
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Breakdown Characteristics of MOVPE Grown Si-Doped GaAs Schottky Diodes
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
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Ballistic Electron Emission Microscopy Study of PtSi–n-Si(100) Schottky Diodes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Electrical Transport Properties of Isolated Carbon Nanotube/Si Heterojunction Schottky Diodes
Applied Physics Letters
Astronomy
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Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/N-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Comment on ‘‘Effect of Sub‐band‐gap Illumination on Β‐FeSi2/N‐type Si Diodes Under Reverse Bias’’
Applied Physics Letters
Astronomy
Physics
Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel N-MISFETs
Room Temperature Operation of Epitaxially Grown Si/Si0.5Ge0.5/Si Resonant Interband Tunneling Diodes
Applied Physics Letters
Astronomy
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