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Publications by Hyeon-Bhin Jo
Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Related publications
High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures
Journal of Applied Physics
Astronomy
Physics
Remote Coulomb Scattering in Metal–oxide–semiconductor Field Effect Transistors: Screening by Electrons in the Gate
Applied Physics Letters
Astronomy
Physics
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Journal of Applied Physics
Astronomy
Physics
Effect of Intravalley Acoustic Phonon Scattering on Quantum Transport in Multigate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Effects of Gate-Last and Gate-First Process on Deep Submicron Inversion-Mode InGaAs N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Flexible High Capacitance Gate Insulators for Organic Field Effect Transistors
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Parallel Core−Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High-Current Surround-Gate Field-Effect Transistors
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
