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Publications by I.G. Thayne

180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m

Electronics Letters
Electronic EngineeringElectrical
2007English

Accurate Non-Uniform Transmission Line Model and Its Application to the De-Embedding of On-Wafer Measurements

IEE Proceedings - Microwaves, Antennas and Propagation
2001English

Low Noise W-Band MMMIC Amplifier Using 50nm InP Technology for Millimeterwave Receivers Applications

2005English

Fabrication of 30nm T-Gate High Electron Mobility Transistors Using a Bi-Layer of PMMA and UVIII

English

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