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Publications by Ievgen Boturchuk
Anomalous Behavior of Electrically Active Defects Near EC−0.5 eV in MOCVD, As-Grown GaN
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Related publications
Microstructure of GaN Grown on (111) Si by MOCVD
MRS Internet Journal of Nitride Semiconductor Research
Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD
MRS Advances
Magnetically Active Vacancy Related Defects in Irradiated GaN Layers
Applied Physics Letters
Astronomy
Physics
Electron Transport Properties in Al0.25Ga0.75N/AlN/GaN Heterostructures With Different InGaN Back Barrier Layers and GaN Channel Thicknesses Grown by MOCVD
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature
Characteristics of MOCVD- And MBE-grown InGa(N)As VCSELs
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Electrically Adjustable Intersubband Absorption of a GaN∕AlN Superlattice Grown on a Transistorlike Structure
Applied Physics Letters
Astronomy
Physics
Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic
Anomalous Behavior Above the Curie Temperature in (Nd1−xGdx)0.55Sr0.45MnO3 (X = 0, 0.1, 0.3 and 0.5)
RSC Advances
Chemistry
Chemical Engineering
