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Publications by In Man Kang
Silicon-Compatible High-Hole-Mobility Transistor With an Undoped Germanium Channel for Low-Power Application
Applied Physics Letters
Astronomy
Physics
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A Vertical Silicon-Graphene-Germanium Transistor
Nature Communications
Astronomy
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Molecular Biology
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Chemistry
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InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Erratum: CORRIGENDUM: Nanocrystalline ZnON; High Mobility and Low Band Gap Semiconductor Material for High Performance Switch Transistor and Image Sensor Application
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Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor
Journal of Applied Physics
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Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
Annals of West University of Timisoara - Physics
Accumulated Body Ultranarrow Channel Silicon Transistor With Extreme Threshold Voltage Tunability
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Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
Applied Physics Express
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Simple Exact Algorithm for Transistor Sizing of Low-Power High-Speed Arithmetic Circuits
VLSI Design
Electronic Engineering
Computer Graphics
Hardware
Electrical
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Computer-Aided Design