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Publications by Ing-Jyi Huang
The Characteristics of Hole Trapping in HfO2∕SiO2 Gate Dielectrics With TiN Gate Electrode
Applied Physics Letters
Astronomy
Physics
Related publications
Spatial Distributions of Trapping Centers in HfO2∕SiO2 Gate Stacks
Applied Physics Letters
Astronomy
Physics
Degradation of Polycrystalline HfO2-based Gate Dielectrics Under Nanoscale Electrical Stress
Applied Physics Letters
Astronomy
Physics
AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric
Electronics Letters
Electronic Engineering
Electrical
Materials Fundamentals of Gate Dielectrics
Soft Breakdown of Hafnium Oxynitride Gate Dielectrics
Journal of Applied Physics
Astronomy
Physics
Characteristics of Al2O3 Gate Dielectrics Partially Fluorinated by a Low Energy Fluorine Beam
Applied Physics Letters
Astronomy
Physics
Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics
AIP Conference Proceedings
Astronomy
Physics
In-Plane-Gate Flexible Single-Crystalline Silicon Thin-Film Transistors With High-K Gate Dielectrics on Plastic Substrates
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Gate-Defined Quantum-Dot Devices Realized in InGaAs/InP by Incorporating a HfO2 Layer as Gate Dielectric
Applied Physics Letters
Astronomy
Physics