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Publications by Isamu AKASAKI
Nitride Semiconductor Surfaces. Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-Ray CTR Scattering and X-Ray Reflectivity Method.
Hyomen Kagaku
Related publications
X-Ray CTR Scattering Measurements Using Conventional X-Ray Source to Study Semiconductor Hetero-Interfaces
Transactions of the Materials Research Society of Japan
Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-Ray CTR Scattering
Transactions of the Materials Research Society of Japan
Improvement of X-Ray Reflectivity Calculations on a Multilayered Surface
Powder Diffraction
Instrumentation
Radiation
Condensed Matter Physics
Materials Science
X-Ray Metrology by Diffraction and Reflectivity
AIP Conference Proceedings
Astronomy
Physics
Melting Behavior of Substrate-Free Polystyrene Surfaces Studied by X-Ray Reflectivity
Acta Crystallographica Section A Foundations of Crystallography
Dense Matter Characterization by X-Ray Thomson Scattering
Journal of Quantitative Spectroscopy and Radiative Transfer
Radiation
Optics
Atomic
Spectroscopy
Molecular Physics,
Evaluation of Joined Silicon Nitride by X-Ray Computed Tomography (X-Ray CT)
Journal of the Ceramic Society of Japan
Materials Chemistry
Chemistry
Condensed Matter Physics
Composites
Ceramics
Local Structure Analysis by X-Ray Raman Scattering.
Nihon Kessho Gakkaishi
X-Ray Reflectivity Method for the Characterization of InGaN/GaN Quantum Well Interface
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
