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Publications by J. B. Kim

Erratum: “High Performance InGaZnO Thin-Film Transistors With High-K Amorphous Ba0.5Sr0.5TiO3 Gate Insulator” [Appl. Phys. Lett. 93, 242111 (2008)]

Applied Physics Letters

English

Microstructures and the Corresponding Magnetic Properties of Half-Doped Nd0.5Sr0.5MnO3 Films

Journal of Applied Physics

English